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2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
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* Glass Passivated Junctions with Center Gate Fire for Greater * * * *
Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Pb-Free Packages are Available*
SCRs 25 AMPERES RMS 50 thru 800 VOLTS
G A K
MARKING DIAGRAM
4 TO-220AB CASE 221A STYLE 3 1 2 3 x A Y WW = 4, 5, 7, 8 or 9 = Assembly Location = Year = Work Week AY WW 650x
PIN ASSIGNMENT
1 2 3 4 Cathode Anode Gate Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2004
1
December, 2004 - Rev. 5
Publication Order Number: 2N6504/D
2N6504 Series
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating *Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State Current RMS (180 Conduction Angles; TC = 85C) Average On-State Current (180 Conduction Angles; TC = 85C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100C) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85C) Forward Average Gate Power (t = 8.3 ms, TC = 85C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 85C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 600 800 IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg 25 16 250 20 0.5 2.0 -40 to +125 -40 to +150 A A A W W A C C Value Unit V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction-to-Case *Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Symbol RqJC TL Max 1.5 260 Unit C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM - - - - 10 2.0 mA mA
ON CHARACTERISTICS
* Forward On-State Voltage (Note 2) (ITM = 50 A) * Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 W) TC = 25C TC = -40C VTM IGT VGT VGD IH tgt tq - - 15 35 - - - - - - 0.2 - - - - 9.0 - 1.0 - 18 - 1.5 1.8 30 75 1.5 - 40 80 2.0 V mA V V mA ms ms
* Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40C) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125C) * Holding Current TC = 25C (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40C * Turn-On Time (ITM = 25 A, IGT = 50 mAdc) Turn-Off Time (VDRM = rated voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125C)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. dv/dt - 50 - V/ms
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2N6504 Series
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
TC , MAXIMUM CASE TEMPERATURE ( C)
P(AV) , AVERAGE POWER (WATTS)
13 0 12 0 110 = CONDUCTION ANGLE
32 = CONDUCTION ANGLE 60 = 30 180 90 dc
24
16 TJ = 125C
10 0 90 80
= 30
60
90
180
dc
8.0
0
8.0 12 16 IT(AV), ON-STATE FORWARD CURRENT (AMPS)
4.0
20
0 0 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 20
Figure 1. Average Current Derating
Figure 2. Maximum On-State Power Dissipation
ORDERING INFORMATION
Device 2N6404 2N6405 2N6405T 2N6407 2N6407T 2N6407TG 2N6408 2N6408G 2N6409 2N6409G 2N6409T Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB Shipping
500 Units / Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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3
2N6504 Series
100 70 50 30 125C 20 iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 25C
10 7.0 5.0 3.0 2.0
300 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 275 250 225 TC = 85C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES
200 175 1.0
0.1 0 0.4 0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8
Figure 3. Typical On-State Characteristics
Figure 4. Maximum Non-Repetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZqJC(t) = RqJC * r(t)
Figure 5. Thermal Response
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2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100 VGT, GATE TRIGGER VOLTAGE (VOLTS) -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 I GT, GATE TRIGGER CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125
10
1 -40 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 6. Typical Gate Trigger Current versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage versus Junction Temperature
100
IH , HOLDING CURRENT (mA)
10
1 -40 -25 -10
5
20
35
50
65
80
95
110 125
TJ, JUNCTION TEMPERATURE (C)
Figure 8. Typical Holding Current versus Junction Temperature
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2N6504 Series
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
B
4
F C T A S
-T-
SEATING PLANE
Q
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
H K Z L V G D N
U
R J
STYLE 3: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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2N6504/D
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